Aluminum Nitride Substrate

Product Documents


Aluminum Nitride Substrate Supplier - Customized Best Solution

GORGEOUS’s aluminum nitride ceramic substrate has excellent thermal conductivity, which significantly improves the heat dissipation efficiency of power semiconductors and ensures stable and reliable operation of customers’ equipment.

High quality aluminum nitride substrate, specially used for heat dissipation of high power electronic equipment

 

Aluminum nitride ALN substrate is a ceramic substrate with excellent thermal and electrical properties, high bending strength (450), and excellent thermal conductivity (170W/mK). In ultra-high power electronic devices, it is an ideal heat dissipation choice for customers, ensuring the stability of electronic devices during operation and effectively reducing the impact of thermal stress on components.

Aluminum Nitride (AlN) - Learn more about this material


Key Advantages of ALN Substrates

What are the advantages of GORGEOUS's aluminum nitride substrate?

 


Aluminum nitride AlN substrate is an ideal choice for heat dissipation of various high-power electronic components

Aluminum Nitride Substrate Technical Values ​​& Parameters

Physical properties

Electrical properties

Density: ≥ 3.34 g/cm3

Dielectric constant at 1 MHz: +/- 8.5

Ra value: ≤ 0.4 µm

Dielectric loss factor at 1 MHz: ≤1 (10-3   )

Color: Grey/Light Brown

Volume resistivity at 20: ≥1014    Ω cm

Maximum temperature: ≥1000 (inert gas)

Dielectric strength: ≥15 kV/mm

Mechanical properties

Geometry - Masterplates

Bending strength DR sigma 0 (3 Point Method): ≥450 MPa

Standard Size: 190 mm × 140 mm (7.5″ × 5.5″), tolerance ±1.0%

Fracture toughness (IF method): ≥3.0MPa*√m

Thickness Range:0.38 mm to 1.50 mm, tolerance ±10%

Young´s modulus: ≥ 300 GPa

Warpage/Camber: 0.2% to 0.6%

Thermal properties

Geometry - Laser Substrate

CTE: 100-800°C: ± 4.8 - 6.2 10-6   /K

Standard Thickness: 0.635 mm (0.025″)

Thermal conductivity (25): 170 W/(m·K)

Length & Width Tolerance: +0.20 mm / -0.05 mm (+0.0079″ / -0.002″)

Specific heat capacity (25°C): 0.72 J/gK

 


Application fields of AlN substrate

  • IGBT module ceramic heat dissipation substrate
  • Laser diode packaging substrate (LD Submount)
  • High-frequency communication module (such as 5G power amplifier module)
  • LED chip packaging heat sink
  • Power semiconductor device (MOSFET, SiC, GaN device) packaging substrate
  • Aerospace radar component heat dissipation layer
  • Electric vehicle inverter module heat dissipation base
  • Microwave/millimeter wave circuit substrate (MMIC)
  • High-performance circuit substrate in medical imaging equipment
  • High-frequency power module substrate in industrial automation control system
  • Optocoupler packaging substrate
  • RF power amplifier module substrate

 


GORGEOUS can process high-quality aluminum nitride substrates for customers

Processing Services

  • Metallization processing (thin film, thick film, DBC, AMB, DPC, etc.)
  • Machining
  • Aluminum Nitride Sputtering Targets
  • Polishing/grinding
Feature Sputtering Targets Substrate
Material Type Aluminum Nitride (AlN) High-Purity Aluminum Nitride (AlN)
Symbol AlN AlN
Purity 99.5% or International Standards 99%, 99.99% or International Standards
Shapes Discs, Plates, Steps (Dia 355mm, Thickness 0.5mm) Discs, Rectangles, Steps, Plates, Sheets, Rods
Custom Shapes & Sizes Available for quoting Available for quoting
Dimensions Diameter (355mm), Thickness (0.5mm), Custom-Made Custom-Made

Additional Notes:

  • Both Sputtering Targets and Substrates are made from high-quality Aluminum Nitride.
  • Purity levels can be customized to meet specific requirements.
  • A variety of shapes and sizes are available, including custom options.