国際的にトップクラスのシリコンカーバイドセラミックソリューションプロバイダー

Ultrafine silicon carbide powder with a particle size of 0.5 to 1.0 µm is used as raw material, B4C-C is used as a sintering aid, the density of the extruded green body is optimized through solvent degreasing + two-step sintering process, and sintering is carried out under vacuum or argon protection.

Ultrafine silicon carbide powder (0.5–1.0 µm) is used as raw material, B4C-C is added as sintering aid, and green embryos are prepared by gel injection molding process. Silicon carbide powder is evenly mixed with monomers, crosslinking agents, water, dispersants, defoamers, toughening agents, pH regulators, retarders and other additives to make slurry, and then a catalyst is added to initiate polymerization to form a three-dimensional polymer skeleton, so that the powder can be locked in situ, and finally two-step degreasing (solvent degreasing + thermal degreasing) is performed, and pressureless sintering is performed under vacuum/argon protection.

Ultrafine silicon carbide powder is used as raw material, compounded with less than 15% graphite material, formed by dry pressing and isostatic pressing, and sintered under vacuum or argon protection.

Silicon carbide submicron powder is used as raw material, and oxide is used as auxiliary agent system. It is formed by dry pressing or cold isostatic pressing and then sintered in liquid phase at 1800–2000 °C.

Select extrusion grade silicon carbide powder of different particle sizes as raw materials, add carbon source, binder, emulsifier and other additives, mix, Knead, extrude, and then react and sinter. It is suitable for producing wires, pipes, plates, etc. with uniform cross-section and long sizes.

Silicon carbide powder of different particle sizes is selected as raw material, organic carbon source and inorganic carbon source are introduced, and dispersed ball milling is carried out with deionized water, dispersant, binder, etc. The prepared silicon carbide slurry is injected into the designed gypsum mold and siliconized in a vacuum atmosphere at 1600–1700 °C. The free silicon content of the product is less than 15%.

Silicon carbide powders of different particle sizes are used as raw materials, different activated carbon sources are added as the second phase, and then dispersants, binders, pressure aids, etc., are added to make high-solid-phase slurry, which is molded and sintered by high-temperature reaction siliconization in a vacuum atmosphere. The free silicon content is 15–20%.

様々な粒径の炭化ケイ素粉末を原料として、モノマー、架橋剤、水、分散剤、消泡剤、強化剤、pH調整剤、遅延剤などの添加剤と炭素源を混合した予混合液に直接添加し、触媒と開始剤で触媒作用を及ぼします。モノマー架橋剤は固化して三次元ネットワーク構造を形成し、セラミック粉末をゲルネットワークに閉じ込めます。このプロセスで製造された材料は、極めて高い曲げ強度と破壊靭性を有します。

Silicon carbide powder with different particle sizes is used as raw material, and is formed using a binder injection process. It is sintered at high temperature under vacuum or argon protection. The free silicon content is usually 10–30%.

Silicon carbide powders of different particle sizes (50–100 µm) are used as raw materials, and the raw materials are modified and formed by binder injection process, special reinforcement process, reaction sintering under vacuum or argon protection, and the free silicon content is less than 15%.