국제적인 선도적 실리콘 카바이드 세라믹 솔루션 공급업체

Ultrafine silicon carbide powder with a particle size of 0.5 to 1.0 µm is used as raw material, B4C-C is used as a sintering aid, the density of the extruded green body is optimized through solvent degreasing + two-step sintering process, and sintering is carried out under vacuum or argon protection.

Ultrafine silicon carbide powder (0.5–1.0 µm) is used as raw material, B4C-C is added as sintering aid, and green embryos are prepared by gel injection molding process. Silicon carbide powder is evenly mixed with monomers, crosslinking agents, water, dispersants, defoamers, toughening agents, pH regulators, retarders and other additives to make slurry, and then a catalyst is added to initiate polymerization to form a three-dimensional polymer skeleton, so that the powder can be locked in situ, and finally two-step degreasing (solvent degreasing + thermal degreasing) is performed, and pressureless sintering is performed under vacuum/argon protection.

Ultrafine silicon carbide powder is used as raw material, compounded with less than 15% graphite material, formed by dry pressing and isostatic pressing, and sintered under vacuum or argon protection.

Silicon carbide submicron powder is used as raw material, and oxide is used as auxiliary agent system. It is formed by dry pressing or cold isostatic pressing and then sintered in liquid phase at 1800–2000 °C.

Select extrusion grade silicon carbide powder of different particle sizes as raw materials, add carbon source, binder, emulsifier and other additives, mix, Knead, extrude, and then react and sinter. It is suitable for producing wires, pipes, plates, etc. with uniform cross-section and long sizes.

Silicon carbide powder of different particle sizes is selected as raw material, organic carbon source and inorganic carbon source are introduced, and dispersed ball milling is carried out with deionized water, dispersant, binder, etc. The prepared silicon carbide slurry is injected into the designed gypsum mold and siliconized in a vacuum atmosphere at 1600–1700 °C. The free silicon content of the product is less than 15%.

Silicon carbide powders of different particle sizes are used as raw materials, different activated carbon sources are added as the second phase, and then dispersants, binders, pressure aids, etc., are added to make high-solid-phase slurry, which is molded and sintered by high-temperature reaction siliconization in a vacuum atmosphere. The free silicon content is 15–20%.

다양한 입자 크기의 탄화규소 분말을 원료로 사용하여 단량체, 가교제, 물, 분산제, 소포제, 강화제, pH 조절제, 지연제 및 기타 첨가제와 탄소원을 혼합하여 미리 혼합된 액체에 직접 첨가하고, 촉매와 개시제를 사용하여 촉매화합니다. 단량체 가교제는 응고되어 3차원 망상 구조를 형성하고 세라믹 분말을 겔 망상 구조에 고정합니다. 이 공정으로 제조된 재료는 매우 높은 굽힘 강도와 파괴 인성을 갖습니다.

Silicon carbide powder with different particle sizes is used as raw material, and is formed using a binder injection process. It is sintered at high temperature under vacuum or argon protection. The free silicon content is usually 10–30%.

Silicon carbide powders of different particle sizes (50–100 µm) are used as raw materials, and the raw materials are modified and formed by binder injection process, special reinforcement process, reaction sintering under vacuum or argon protection, and the free silicon content is less than 15%.