GORGEOUS CERAMICS (GGS Ceramic)'s MOCVD silicon carbide coated disks are made from high-purity isostatically pressed graphite, precision-machined, high-temperature purified, and produced using chemical vapor deposition (CVD) processes. Furthermore, GORGEOUS CERAMICS (GGS Ceramic) employs advanced multi-zone flow field controlled vapor deposition technology, enabling extremely high-precision silicon carbide film thickness distribution, with coating thickness variations of <15%, ensuring consistency.
We can customize products according to your needs and drawings, including dimensions, flatness, and surface roughness.
Delivery
We understand the stringent requirements of semiconductor customers regarding production line scheduling, and provide you with standardized and efficient response services:
- We will complete a feasibility assessment and quotation within 24-48 hours of receiving design drawings.
- For urgent customers, we offer a fast track for expedited orders, completing complex precision machining and customized production in 4-6 weeks.
Verpackung
To ensure zero-particle contamination and damage-free delivery of MOCVD silicon carbide coated trays during transportation, GORGEOUS CERAMICS (GGS Ceramic) employs high-specification semiconductor-grade packaging.
- Packaging in a Class 100 cleanroom: Our products undergo ultrasonic cleaning, high-pressure drying, and encapsulation in a Class 100 cleanroom, completely eliminating contamination from suspended particles.
- Double-layer dust-free vacuum sealing: We use antistatic, high-barrier, moisture-proof bags for double-layer vacuum packaging, effectively blocking oxygen and moisture.
Specifications and Models
GORGEOUS CERAMICS (GGS) MOCVD silicon carbide coated trays can be configured to meet different equipment platforms and process requirements. Common sizes include:
19 trays × 2 inches
14 trays × 4 inches
36 trays × 4 inches
41 trays × 4 inches
Applications of MOCVD silicon carbide coated disks
Our products are compatible with the following MOCVD equipment brands:
- Compatible with AIXTRON's Planetary® G5+ C / AIX G5 C, Planetary® G3 / G4-TM, Crius® I / II / II-XL, G10-SiC, AIX 2800G4-TM, and other series of products.
- Compatible with Veeco's TurboDisc® EPIK 868 / EPIK 700, TurboDisc® K465i / MaxBright, Propel® GaN Power MOCVD, Lumina® MOCVD, and other series of products.
- Compatible with AMEC's Prismo A7® / Prismo UniGrid®, Prismo PD570® / Prismo PD700®, Prismo 1°®, and other series of products.
Performance advantages of MOCVD silicon carbide coated disks
Ultra-high purity, suitable for MOCVD processes sensitive to contamination
In MOCVD epitaxial growth, even trace contamination at the ppb/ppm level can lead to serious problems such as increased defect density and uneven thickness in the epitaxial layer.
GORGEOUS CERAMICS (GGS Ceramic)'s MOCVD silicon carbide coated disks use high-density isostatic graphite as the substrate and are refined through ultra-high temperature physical purification and high-density CVD-SiC coating and encapsulation processes.
- Ultra-high purity control: The total impurity content of our products is strictly controlled to < 5 ppm, and key metal elements such as Fe, Ni, and Cu are controlled to < 0.1 ppm, effectively preventing secondary contamination of the wafer due to impurity volatilization.
- Superior isolation and corrosion resistance: The product features a dense, pinhole-free silicon carbide coating with a thermal expansion coefficient precisely matched to the graphite substrate, capable of withstanding high-temperature and high-radiation environments up to 1200℃.
Ensures long-term coating integrity without worrying about thermal cycling
Under frequent temperature fluctuations and high-temperature, high-pressure conditions, coatings may crack or peel off, leading to graphite particle erosion and severe wafer contamination.
GORGEOUS CERAMICS (GGS Ceramic)'s MOCVD silicon carbide coated disks, thanks to their precision-machined high-purity substrates and proprietary, controllable CVD silicon carbide deposition technology, achieve atomic-level bonding between the coating and the substrate, ensuring stable epitaxial growth under high-frequency thermal cycling.
- Excellent thermal expansion coefficient matching: The difference in thermal expansion coefficients between the silicon carbide coating and the graphite substrate is controlled to <0.1×10^-6/K, completely eliminating external thermal stress and withstanding >1000 cycles of rapid heating without microcracks or peeling.
- Dense, zero-porosity structure: The product's grain size is <5 μm, with a density exceeding 99.9%, and our coating thickness is precisely controlled to 100 ± 10 μm.
Uniform heat transfer epitaxial growth
In MOCVD epitaxy, even a localized temperature difference of 1°C on the carrier disk surface can cause wafer wavelength deviations, reducing product yield.
GORGEOUS CERAMICS (GGS Ceramic)'s MOCVD silicon carbide coated disks possess highly stable and isotropic thermal conduction channels, providing a uniform thermal environment.
- Extreme temperature control: Our products maintain a precise temperature difference of < ±1.0°C within a high-temperature growth environment of 1000°C~1500°C, while the temperature difference between individual wafers within the disk is < 0.8°C.
- High-precision coating thickness control: Utilizing our self-developed multi-point flow field controlled deposition technology, the overall silicon carbide coating thickness deviation is controlled within ±3 μm, effectively eliminating thermal resistance differences caused by uneven coating thickness.
Häufig gestellte Fragen
What are the applications of silicon carbide-coated disks in MOCVD?
Silicon carbide-coated disks are used as wafer supports or substrates in MOCVD reactors, primarily for epitaxial growth processes of GaN, SiC, and other compound semiconductors.
These products can support multiple wafers, ensuring stable temperature control and uniform deposition.
What are the advantages of silicon carbide coatings in MOCVD applications?
Silicon carbide coatings possess high purity, high thermal conductivity, heat resistance, and corrosion resistance. These properties help maintain a uniform temperature distribution, reduce particulate contamination, and extend lifespan in demanding MOCVD operations.
How does coating uniformity affect epitaxial growth quality?
Uniform coating thickness is crucial for achieving consistent heat transfer and stable wafer temperatures. High coating uniformity helps minimize temperature gradients across the disk, thereby improving the uniformity, repeatability, and overall process yield of the epitaxial layer thickness.
Which manufacturers in China produce silicon carbide ceramics?
GORGEOUS CERAMICS (GGS Ceramic): A manufacturer specializing in customized and precision-machined advanced ceramics, offering a wide range of silicon carbide ceramic products, such as silicon carbide PVD carriers, silicon carbide coated trays, sintered structural components, and various structural ceramic parts. OEM/ODM customization is also supported.
XC: Possesses extensive manufacturing experience in advanced ceramics and electronic ceramics, with products applicable to high-performance ceramic applications.
Shandong Tianyue Advanced Ceramics: Primarily focuses on silicon carbide single-crystal substrate materials and enjoys a high reputation in the SiC industry chain.
Are your coated trays prone to cracking or peeling under high-temperature thermal cycling?
No. GORGEOUS CERAMICS (GGS Ceramic) precisely controls the difference in thermal expansion coefficients between the SiC coating and the graphite substrate to < 0.1×10⁻⁶/K through precise control of CVD deposition parameters. There is no risk of microcracks or peeling.
Do you support non-standard customization or provide drawing-based processing (OEM/ODM)?
Yes. GORGEOUS CERAMICS (GGS Ceramic) has a high-precision CNC machining and CVD coating production line, and can customize processing according to customer-provided drawings.
