Cerámica semiconductora
Semiconductor ceramics are ceramic materials with semiconductor properties and are widely used in electronics, optoelectronics, sensors, heaters and other fields.
Cerámica semiconductora
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Semiconductor Ceramics Description
Advanced ceramics are a critical part of semiconductor manufacturing equipment. A large amount of plasma is generated during the semiconductor manufacturing process, and it is crucial to use plasma-resistant materials as equipment components. Compared with metals, resins, and glass, advanced ceramics are more high-performance and reliable. Their resistivity is usually between conductors and insulators, and their electrical insulation is excellent, making them very suitable for semiconductor manufacturing processes.
We provide you with all the ceramic materials you need:
✅Alúmina (Al2O3) — Ultra-high purity and rigidity;
✅Nitruro de aluminio (AlN) — Excellent thermal conductivity and insulation;
✅Nitruro de silicio (Si3N4) — Ultra-high fracture toughness and low thermal expansion coefficient;
✅Silicon Carbide (SiSiC)— Low density and coefficient of thermal expansion.
Based on your needs, we can recommend the best material for you to create ultra-high precision semiconductor ceramic components for you!
Garantía de tiempo de fabricación y envío
GORGEOUS cooperates with several leading international logistics companies to produce for you quickly and deliver the products to you on time and intact!
La fabricación y el transporte de cerámica se ven afectados por el proceso y su ubicación. Fabricaremos rápidamente para usted según su plan y elegiremos el mejor método de transporte. Fastest air delivery in North America, arrives in 7 days.
The logistics companies we cooperate with include:
- MSC (Compañía Naviera del Mediterráneo)
- Maersk
- CMA CGM
- COSCO
- Hapag-Lloyd
- DHL
- Unión Postal Universal
- FedEx
- TNT
Trabajamos con múltiples transportistas para garantizarle opciones de envío eficientes a precios más bajos, entrega a tiempo, y ¡Sin cargos ocultos!
Fabricación
Embalaje
Cargando
Transporte
Main Properties of Semiconductor Ceramics
Alta dureza
Resistente al desgaste
Resistente a la corrosión
Resistencia a altas temperaturas
Aislamiento fuerte
PRECIOSA Referencia de Precisión de Producto Personalizable
| Processing Technology | parameter | Achievable accuracy |
| Molienda | Flatness, parallelism, Ra | Ra≥0,05 μm” Flatness＜1μm |
| Molienda | Flatness | 5 μm < Ø 200 mm / 10 μm > Ø 200 mm |
| Roughness | Ra from 0,15 μm to 0,6 μm | |
| Paralelismo | 5 μm < Ø 200 mm / 10 μm > Ø 200 mm | |
| Eroding | Symmetrical | Max. 0.05mm (hole/positioning slot) |
| Pulido | Flatness, Parallelism, Roughness | Ra0.06μm-0.35μm Flatness＜2μm Parallelism＜2μm |
| Structuring | Roughness | Roughness < 3,2 μm Size < 150 μm |
*La precisión específica debe determinarse de acuerdo con el material, la forma y los requisitos del proceso del producto real.
Semiconductor Ceramic Optional Process
| Product Type | Special Requests |
| Sustrato cerámico | Polishing, metallization coating, gold plating |
| Brazo de cerámica | Mirror polishing, ventilation slots, anti-static coating |
| Ceramic Rings/Gaskets | Sandblasting, Teflon coating, surface coating |
| Tubo de cerámica | Inner wall polishing, hot isostatic pressing, surface coating |
| Ceramic Suction Cup | Micro hole processing, blind hole processing, adsorption vent design |
| Ceramic Heating Element | Metallized coating, surface glaze, antistatic coating |
Customized Semiconductor Ceramic Material Parameters and Selection
| Artículo | Unidad | Nitruro de silicio |
| Densidad | g/cm3 | >3.2 |
| Dureza | – | HRA90 |
| Dureza Vickers (Hv50) | HV0.5 | >1550 |
| Módulo de elasticidad | GPa | 290 |
| Resistencia a la flexión | MPa | >600 |
| Resistencia a la compresión | MPa | 2500 |
| Tenacidad a la fractura | MPam1/2 | >6.0 |
| Temperatura máxima de uso | °C | 1200 |
| Conductividad térmica | W /（M·K） | 15-20 |
| Coeficiente de expansión térmica | 10-6/°C | >3.1 |
| Resistencia al choque térmico | △T℃ | 500 |
| Capacidad calorífica específica | KJ/kg·K | 700 |
| Rigidez dieléctrica | KV/mm | 1 |
| Constante dieléctrica | εr | – |
| Resistividad volumétrica a 20℃ | Ω.cm | 1.0×1012 |
| Artículo | Unidad | Carburo de silicio sinterizado sin presión | Reaction Bonded Silicon Carbide | Recrystallized Sintered Silicon Carbide |
| Temperatura máxima de funcionamiento | °C | 1600 | 1380 | 1650 |
| Densidad | g/cm3 | >3.1 | ＞3.02 | ＞2.6 |
| Porosidad | % | ＜0.1 | ＜0.1 | 15% |
| Resistencia a la flexión | MPa | ＞400 | 250（20℃） | 90-100（20℃） |
| MPa | – | 280（1200℃） | 100-120（1100℃） | |
| Módulo elástico | GPa | 420 | 330（20℃） | 240 |
| GPa | – | 300（1200℃） | – | |
| Conductividad térmica | W/mk | 74 | 45(1200℃) | 24 |
| Coeficiente de expansión térmica | K-1×10-6 | 4.1 | 4.5 | 4.8 |
| Dureza Vickers | GPa | 22 | 20 | – |
| Acid and Alkali Resistance | – | excellent | excellent | excellent |
| Propiedad | Unidad | Alabama2Oh3 99.7 | Alabama2Oh3 99.5 | Alabama2Oh3 99 | Alabama2Oh3 95 |
| Pureza | — | 99.7% | 99.5% | 99% | 95% |
| Densidad | g/cm3 | 3.92 | 3.9 | 3.8 | 3.7 |
| Resistencia a la flexión | MPa | 375 | 370 | 340 | 304 |
| Resistencia a la compresión | MPa | 2450 | 2300 | 2250 | 1910 |
| Módulo elástico | GPa | 380 | 370 | 330 | 330 |
| Tenacidad a la fractura | MPam1/2 | 4.5 | 4.3 | 4.2 | 3.8 |
| Dureza | HRA | 91 | 91 | 90 | 89 |
| Dureza Vickers | HV1 | 1600 | 1550 | 1450 | 1400 |
| Coeficiente de expansión térmica | 10- 6 K-1 | 7.8 | 7.8 | 7.7 | 7.5 |
| Conductividad térmica | W/mk | 32 | 32 | 25 | 25 |
| Estabilidad al choque térmico | △T.℃ | 220 | 220 | 200 | 200 |
| Temperatura máxima de funcionamiento | °C | 1750 | 1750 | 1700 | 1500 |
| Resistencia de volumen a 20℃ | Ω·cm | 1015 | 1015 | 1014 | 1014 |
| Rigidez dieléctrica | KV/mm | 22 | 20 | 16 | 15 |
| Constante dieléctrica (temperatura ambiente) | / | 10 | 11 | 11.5 | 11 |
| Factor de pérdida dieléctrica de MHz | tan δ | 1×10-3 | 1×10-3 | 3×10-3 | 3×10-3 |
| Artículo | Unidad | Nitruro de aluminio |
| Densidad | g/cm3 | 3.31 |
| Módulo de elasticidad | GPa | 310 |
| Tenacidad a la fractura | MPa × m1/2 | 3.5 |
| coeficiente de Poisson | – | 0.25 |
| Compressive | MPa | 2100 |
| Resistencia a la flexión | MPa | 335 |
| Dureza (Vickers) | GPa | 11 |
| Hardness (Knoop 100g) | Kg/mm2 | 1170 |
Customizable Ceramic Shaft end Type Reference
Alumina material products
❇️Wafer Polishing Plates：High hardness and wear resistance ensure high precision and long life of wafer polishing.
❇️End Effectors / Wafer-Handling：Excellent mechanical strength and chemical stability, suitable for wafer handling in high-cleanliness environments.
❇️Metalised Products：Good electrical conductivity and high temperature resistance, suitable for high power electronic devices.
❇️Chamber Rings / Sputtering Targets：High purity and corrosion resistance ensure the stability and consistency of the thin film deposition process.
Silicon Carbide Material Products
❇️Wafer Polishing Plates：Extremely high hardness and thermal conductivity, suitable for efficient and high-precision wafer polishing.
❇️Electrostatic Chucks：Excellent thermal conductivity and electrical insulation ensure stable adsorption of wafers at high temperatures.
❇️Vacuum Chucks：High strength and heat resistance, suitable for wafer fixing in high vacuum environment.
❇️End Effectors / Wafer-Handling：Lightweight and highly rigid, suitable for high-speed, high-precision wafer handling.
❇️Chamber Rings：Excellent high temperature and corrosion resistance, suitable for harsh semiconductor process environments.
What are The Uses of Semiconductor Ceramics?
Ceramic Robot Arm/Ceramic End Processor
The ceramic arm plays the role of conveying and carrying in semiconductor equipment, which is equivalent to the arm of the robot of semiconductor equipment. It is mainly responsible for transporting wafers and silicon chips to designated locations.
Semiconductor Ceramic Heater
Semiconductor heaters have excellent thermal conductivity, high temperature resistance and electrical insulation. They can heat up quickly and evenly, and are widely used in semiconductor manufacturing, optoelectronic equipment and other scenarios.
Vacuum Wafer Ceramic Chuck
Vacuum wafer chuck is an important device for precision machining and semiconductor manufacturing, designed for fixing and handling silicon wafers or other thin materials. It can use the principle of vacuum adsorption to ensure that the wafer is stable and does not move during processing, testing or cleaning.
Semiconductor Equipment Parts
Many semiconductor devices use advanced ceramic products, such as ceramic insulating disks, ceramic insulating rings, thermistors, gas-sensitive ceramics, photosensitive ceramics, etc.
One-stop Semiconductor Ceramic Manufacturing Service
15+ Años de experiencia. Alta precisión y diseño OEM. Equipo profesional de I+D. Precio competitivo.
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What is the service life of your products?
Our semiconductor ceramic products have excellent durability and can work stably for a long time in high temperature, high pressure and corrosive environments, reducing your replacement costs.
How to choose materials?
According to different application scenarios, we recommend you to choose the right material:
- Aluminum nitride (AlN): It has excellent thermal conductivity (>170 W/m·K) and electrical insulation, and is suitable for high-power semiconductor devices.
- Aluminum oxide (Al₂O₃): It has good mechanical strength and corrosion resistance and is widely used in conventional electronic components.
- Silicon nitride (Si₃N₄): It has both high temperature stability and impact resistance, and is particularly suitable for key components in harsh environments.
Your customization capabilities
We support customization of various specifications and complex structures. Whether it is micron-level precision processing or the manufacturing of special-shaped parts, we can meet your requirements.
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