SiC Wafers / SiC Substrates
GORGEOUS is a leading international ceramic supplier, specializing in providing customers with SIC substrates/wafer products used in new energy electric vehicles and semiconductor manufacturing. We can customize exclusive solutions based on the application!
Silicon Carbide Substrate Solutions
- Multi-Specification Wafer Supply: We offer standard wafer sizes, including 2-inch, 4-inch, and 6-inch, and can customize wafers based on customer needs.
- High-Purity Crystal Growth: We utilize advanced PVT (Physical Vapor Transport) and high-temperature sintering processes to ensure low defect density and high uniformity.
- 精密加工： We offer wafer dicing, grinding, polishing, and epitaxial (Epi) growth processes to ensure surface quality and flatness.
- Metallization and Post-Processing: We offer coating, ion implantation, patterning, and etching services tailored to customer needs to enhance device integration.
- Strict Testing: We conduct defect inspection, thickness uniformity testing, and surface roughness testing on every wafer to ensure it meets the diverse needs of our customers’ high-end applications.
Leading International SiC Substrate Supplier
GORGEOUS has over 15 years of expertise in high-performance ceramic substrate manufacturing, dedicated to providing customers with high-quality SiC substrates and wafers.
We utilize advanced crystal growth technology, employing high-temperature PVT, to produce large-scale, low-defect SiC crystals to meet global market demands.
We offer a complete processing chain, from crystal growth → wafer slicing → polishing → epitaxy → metallization, providing customers with a one-stop solution and ensuring consistent quality.
Our products are marketed globally and have earned the trust of numerous international customers. Whether you’re in the new energy vehicle, renewable energy, communications, or high-end semiconductor industries, GORGEOUS can meet your needs!
When you choose GORGEOUS, you’re not just choosing a supplier; you’re choosing a trusted manufacturing partner capable of large-scale production and fast delivery.
Silicon Carbide Substrate/Silicon Carbide Wafer Product Gallery
4H n-Type SiC Substrate
| Polytype | 4H |
| Diameter（mm） | 150/200 |
| Orientation（°） | 4 |
| Thickness（μm） | 350/500 |
| 表面处理 | Epi-ready |
4H Semi-Insulating
| Polytype | 4H |
| Diameter（mm） | 100 & 150 |
| Orientation（°） | 0 |
| Thickness（μm） | 500 |
| 表面处理 | Epi-ready |
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Silicon Carbide Substrate/Wafer Applications
Electronics and Semiconductor Fields
氧化铝衬底具备出色的电气绝缘性与散热性能，可广泛应用于印制电路板（PCB）及混合集成电路（HIC）。
此类衬底在电子与半导体领域的常见应用包括半导体封装衬底、厚/薄膜电路衬底以及传感器基座。
通信与射频（RF）领域
氧化铝衬底可在通信与射频（RF）领域用作射频电路衬底及微波器件衬底。在高频通信（如 5G 基站与雷达系统）中，它能保持极低的介电损耗与稳定的信号传输。作为微波器件衬底，它常用于滤波器、功率放大器及耦合器等元件中，以确保优异的高频特性。
汽车与新能源领域
氧化铝衬底可用于汽车及新能源汽车领域，为 IGBT 模块、电机驱动模块等功率模块提供散热保障，确保系统高效稳定运行。此外，它还可用作车载电子电路基板。
照明与显示领域
Alumina substrates can be used in high-power LED lamp beads to dissipate heat, helping to avoid light decay; while in laser diodes and displays, ceramic substrates can provide good electrical insulation and thermal management.
Aerospace and Military
Radar and satellite electronic devices require high-frequency, high-power, and highly reliable components, and alumina substrates can provide high insulation and thermal stability.
您担心最小起订量吗？
Our SiC substrates offer custom monolithic manufacturing to meet small order needs. Experience our services today.
为什么选择 GORGEOUS？
At GORGEOUS, quality control is our top priority. Every SiC substrate is manufactured to our customers’ exacting specifications and undergoes multiple inspections and tests, from raw materials to finished product, to ensure consistent performance and reliable quality.
我们的工厂已通过面向汽车行业之 IATF 16949:2016 认证以及国际质量管理体系 ISO 9001:2015 认证。这不仅体现了我们对品质的坚定承诺，更确保了我们能够为客户提供高标准的定制化解决方案。
我们的通行证成功 评价
The wafers provided by GORGEOUS are of stable quality, delivered on time and have excellent performance.
Christopher Johnson
We needed custom silicon nitride substrates for high-power electronic modules, and GORGEOUS fully met our technical requirements.
Richard Collins
The silicon nitride ceramic substrates provided by GORGEOUS have high surface finish, uniform microstructure and good performance consistency.
卢卡斯·迈尔
常见问题解答
What is the heat dissipation performance of silicon carbide substrates?
SiC substrates typically have a thermal conductivity over three times that of silicon and can effectively reduce device operating temperatures. In high-power applications such as new energy vehicles and photovoltaic inverters, the use of SiC substrates enables long-term stable operation at high temperatures and high currents, effectively extending system life.
Is your delivery time stable?
Silicon carbide crystals are difficult to grow and process, which generally results in higher costs than silicon substrates. However, GORGEOUS’s production technology is highly mature, and we have a comprehensive production line and stable supply capabilities, supporting small-batch R&D to large-scale mass production, while ensuring stable delivery to customers.
Why is defect density in SiC substrates important?
Defect density (such as micropipes and dislocations) directly impacts chip yield and performance. Low-defect-density SiC wafers significantly improve device consistency and reliability, making them a key concern for customers during procurement.