Silicon Carbide RTA Susceptor

GORGEOUS CERAMICS (GGS) silicon carbide RTA carriers are primarily manufactured through isostatic pressing and high-temperature sintering.

Our professional technicians can perform precision machining based on customer-provided design drawings, specifying the outer diameter, thickness, number and size of cavity slots, and the location and shape of the pick-up slots to meet your application needs.

Silicon carbide RTA susceptor designed for rapid thermal annealing in semiconductor processing


Performance Advantages of Silicon Carbide RTA Carrier Disks

Plasma Resistance

GORGEOUS CERAMICS (GGS) silicon carbide products exhibit excellent resistance to plasma erosion, maintaining structural integrity and surface stability even in high-density plasma environments.

High Thermal Conductivity and Temperature Uniformity

Silicon carbide possesses excellent thermal conductivity. Our silicon carbide RTA carriers perfectly achieve rapid and uniform heat transfer across the wafer surface, ensuring precise temperature control and superior temperature uniformity.

Résistance aux chocs thermiques

Silicon carbide exhibits excellent thermal shock resistance, preventing cracking or deformation of silicon carbide carriers during rapid heating and cooling.

Stabilité dimensionnelle

Silicon carbide maintains excellent mechanical strength and dimensional stability even at high temperatures.

High-temperature resistant SiC RTA susceptor with excellent thermal stability


Silicon Carbide RTA Susceptor Specifications

This product measures 334*334mm, is 3.5mm thick, and has a trench depth of 0.6-0.8mm. GORGEOUS CERAMICS (GGS) can customize optimal semiconductor application solutions based on customer applications.


FAQ

1.What are the uses of silicon carbide RTA plates?

Silicon carbide RTA plates are primarily used in rapid thermal annealing (RTA) systems to support and heat semiconductor wafers during high-temperature processes such as doping activation, oxidation, and annealing.

The high thermal conductivity and thermal stability of SiC ensure rapid and uniform heating and precise temperature control.

 

2.Why is silicon carbide (SiC) a better choice than graphite or quartz for rapid thermal annealing (RTA) substrates?

Compared to graphite and quartz, SiC offers superior thermal conductivity and temperature resistance, and is chemically stable.

Unlike graphite, SiC does not produce particles in high-temperature applications, requires no coating, and offers superior performance compared to quartz, making it a perfect fit for semiconductor processes.

 

3.Can you customize for a specific RTA system?

Yes, GORGEOUS CERAMICS (GGS) can customize to your required size, thickness, shape, and surface finish.