GORGEOUS CERAMICS (GGS) silicon carbide PVD carriers are formed by isostatic pressing and high-temperature sintering. We can precision machine the outer diameter, thickness, number and size of cavities, and the position and shape of the pick-up slots according to the user’s design drawings to meet your application needs.
Advantages of Silicon Carbide PVD Carriers
Plasma Shock Resistance
SiC maintains structural and performance stability even in high-energy plasma environments, effectively reducing particle formation and extending service life.
Temperature Conductivity and Uniformity
Silicon carbide possesses high thermal conductivity, ensuring uniform temperature distribution on the carrier surface and contributing to improved film deposition consistency and process stability.
Résistance aux chocs thermiques
Excellent thermal shock resistance makes silicon carbide less prone to cracking in rapid heating and cooling environments, making it ideal for high-frequency process cycles and effectively reducing the risk of cracking due to thermal stress.
Silicon Carbide PVD Carrier Disk Product Specifications
|
Diamètre extérieur |
Tolérance |
Épaisseur |
Tolérance |
Chip size and number of chips |
|
230 |
±0.1 |
3 |
±0.05 |
4 inches, 3 pieces |
|
300 |
±0.1 |
1.4 |
±0.05 |
4 inches, 5 pieces |
|
300 |
±0.1 |
3 |
±0.05 |
4 inches, 5 pieces |
|
300 |
±0.1 |
1.4 |
±0.05 |
4-inch (7 pieces), 6-inch (2 pieces) |
|
300 |
±0.1 |
3 |
±0.05 |
4-inch (7 pieces), 6-inch (2 pieces) |
FAQ
1. What are the main advantages of silicon carbide PVD substrates?
Silicon carbide PVD substrates possess excellent resistance to plasma attack, high thermal conductivity, and thermal stability.
These superior properties allow for uniform temperature distribution during deposition, effectively reduce particulate contamination, and extend the lifespan of the substrate in the PVD process environment.
2. Why is temperature uniformity crucial in Physical Vapor Deposition (PVD) processes?
In Physical Vapor Deposition (PVD) processes, temperature uniformity directly affects the consistency of film thickness and coating quality. GGS’s silicon carbide substrates can provide rapid and uniform heat transfer, thus improving the yield of PVD film deposition.
3. How does the silicon carbide substrate perform under rapid heating and cooling cycles?
Silicon carbide has strong thermal shock resistance and can withstand frequent rapid heating and cooling without cracking or deformation.
