GORGEOUS CERAMICS (GGS) silicon carbide ICP carriers are made from spray-granulated silicon carbide powder, formed by isostatic pressing and high-temperature sintering.
We can perform precision machining on the outer diameter, hole diameter, hole depth, and groove depth according to your drawings to meet your application requirements.
Performance Advantages of Silicon Carbide ICP Carriers
Our ICP carriers offer superior resistance to plasma impact, excellent thermal conductivity, temperature uniformity, and good thermal shock resistance.
Specifications and model number
|
Diamètre extérieur |
Tolérance |
Épaisseur |
Tolérance |
Chip size and number of chips |
|
380 |
±0.1 |
4.4 |
±0.05 |
4-inch (9 pieces), 6-inch (3 pieces) |
|
380 |
±0.1 |
3 |
±0.05 |
4-inch (9 pieces), 6-inch (3 pieces) |
|
330 |
±0.1 |
4.4 |
±0.05 |
4 inches (7 pieces), 6 inches (1 piece) |
|
330 |
±0.1 |
3 |
±0.05 |
4 inches (7 pieces), 6 inches (1 piece) |
FAQ
What are the main advantages of silicon carbide ICP substrates compared to traditional materials?
Our silicon carbide ICP substrates exhibit excellent plasma resistance, high thermal conductivity, and outstanding thermal stability.
Compared to graphite or metal substrates, silicon carbide offers longer lifespan, less particle generation, and more stable processing performance.
Are silicon carbide ICP substrates suitable for high-power plasma and high-temperature processes?
Yes, our silicon carbide ICP substrates possess excellent resistance to high-density plasma and thermal shock, enabling them to maintain structural integrity and dimensional stability even under high-power ICP processes and repeated thermal cycling.
